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| KSA910 KSA910 Driver Stage Of Audio Amplifier & High Voltage Switching Applications * Collector-Emitter Voltage : VCEO= -150V * Output Capacitance : Cob=5pF (MAX.) * Complement to KSC2310 1 TO-92L 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -150 -150 -5 -50 800 150 -55 ~ 150 Units V V V mA mW C C Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO hFE VCE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC= -100A, IE=0 IC= -5mA, IB=0 IE= -10A, IC=0 VCB= -150V, IE=0 VCE= -5V, IC= -10mA IC= -10mA, IB= -1mA VCE= -30V, IC= -10mA VCB= -10V, IE=0, f=1MHz 100 5 40 Min. -150 -150 -5 -100 240 -0.8 V MHz pF Typ. Max. Units V V V nA hFE Classification Classification hFE R 40 ~ 80 O 70 ~ 140 Y 120 ~ 240 (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA910 Typical Characteristics -70 -65 1000 VCE = -5V IC[mA], COLLECTOR CURRENT -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 -11 -12 -13 -14 IB = -500A IB = -400A IB = -300A IB = -200A IB = -100A hFE, DC CURRENT GAIN IB = -600A 100 10 -0.1 -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 -80 IC = 10 IB -70 VCE = -5V IC[mA], COLLECTOR CURRENT -60 -1 V BE(sat) -50 -40 VCE(sat) -0.1 -30 -20 -10 -0.01 1 10 100 1000 0 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 IC[mA], COLLECTOR CURRENT VBE [V], BASE-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage -1000 1.0 IC[mA], COLLECTOR CURRENT -100 100ms PC[W], POWER DISSIPATION -1000 0.8 0.6 DC -10 0.4 0.2 -1 -1 -10 -100 0.0 0 25 50 o 75 100 125 150 175 VCE [V], COLLECTOR-EMITTER VOLTAGE Ta[ C], AMBIENT TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA910 Package Demensions TO-92L 4.90 0.20 8.00 0.20 1.70 0.20 1.00 0.10 0.70MAX. 0.80 0.10 1.00MAX. 13.50 0.40 0.50 0.10 1.27TYP [1.27 0.20] 2.54 TYP 0.45 0.10 1.45 0.20 3.90 0.20 3.90 0.20 0.45 0.10 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
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